Socrates (SilicOn Carbide tRAnsistor Trench procEsS)
20th April 2021
Project value: £137,423
Funded Period: Jan 21 - Sep 21
Project partners:
Project summary: SOCRATES will introduce silicon carbide (SiC) and GaN trench processing technologies to the UK, establishing a critical capability into the PEMD supply chain for power transistors. This 9-month project will define the critical semiconductor manufacturing processing steps required for introducing a disruptive SiC power MOSFET supply chain for automotive power electronics to the UK, aligned with the goals of the Driving the Electric Revolution (DER) initiative. We will establish a new UK SiC manufacturing capability - developing Trench MOSFET technology within the Materials and Components DER Centre and critically, pilot SiC trench etch processing, whilst also developing a backside SiC etch process module for future VGaN-on-SiC devices.
Objectives
- To establish an industry scaled-up trench etch process for SiC and GaN power devices.
- To develop an in-line SiC trench process for high volume manufacturing.
Contact: Get in touch with the team on projects@csconnected.com to find out more about the Socrates project.
Related:
- UK establishes first industrial supply chain for high-power SiC and GaN trench devices
- Download the SOCRATES flyer:
